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UnitedSiC UF3SC065030D8S
SICFET N-CH 650V 18A 4DFN
Manufacturer # :UF3SC065030D8S
Manufacturer :UnitedSiC
Dasenic # :UF3SC065030D8S-DS
Datasheet :
UF3SC065030D8S Datasheet
UF3SC065030D8S DatasheetCustomer # :
Description : SICFET N-CH 650V 18A 4DFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 34.7420 | $ 347.42 |
| 2500+ | $ 19.3011 | $ 48252.75 |
In Stock: 62
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 34.742
Total :$ 34.74
Delivery :
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UF3SC065030D8S information
UnitedSiC UF3SC065030D8S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-PowerTSFN
- Technology:SiCFET (Cascode SiCJFET)
- Supplier Device Package:4-DFN (8x8)
- Power Dissipation ( Max):179W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:18A (Tc)
- Rds On ( Max) @ Id, Vgs:42mOhm @ 20A, 12V
- Vgs(th) ( Max) @ Id:6V @ 10mA
- Gate Charge ( Qg) ( Max) @ Vgs:43 nC @ 12 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1500 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):12V
- Vgs ( Max):±25V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
UF3SC065030D8S provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support.
On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications.
Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
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