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UnitedSiC UF3SC065007K4S
MOSFET N-CH 650V 120A TO247-4
Manufacturer # :UF3SC065007K4S
Manufacturer :UnitedSiC
Dasenic # :UF3SC065007K4S-DS
Datasheet :
UF3SC065007K4S Datasheet
UF3SC065007K4S DatasheetCustomer # :
Description : MOSFET N-CH 650V 120A TO247-4
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 53.5140 | $ 53.51 |
| 25+ | $ 51.0790 | $ 1276.98 |
In Stock: 4668
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 53.514
Total :$ 53.51
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UF3SC065007K4S information
UnitedSiC UF3SC065007K4S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-4
- Technology:-
- Supplier Device Package:TO-247-4
- Power Dissipation ( Max):789W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:120A (Tc)
- Rds On ( Max) @ Id, Vgs:9mOhm @ 50A, 12V
- Vgs(th) ( Max) @ Id:6V @ 10mA
- Gate Charge ( Qg) ( Max) @ Vgs:214 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):12V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:Vendor omitted MSL Rating information
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
UF3SC065007K4S provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support.
On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications.
Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
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