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UnitedSiC UF3C120080B7S
SICFET P-CH 1200V 28.8A D2PAK-7
- Mfr.Part # :UF3C120080B7S
- Manufacturer :UnitedSiC
- Dasenic # :UF3C120080B7S-DS
- Datasheet :
UF3C120080B7S Datasheet
- Description : SICFET P-CH 1200V 28.8A D2PAK-7
- Package :-
- Quantity :Unit Price : $ 10.845Total : $ 10.85
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 13338
( MOQ : 1 PCS )Pricing (USD) : * All prices are in USD
Quantity | Unit Price | Total |
1 + | $ 10.8450 | $ 10.85 |
25 + | $ 9.4230 | $ 235.58 |
100 + | $ 8.1270 | $ 812.70 |
250 + | $ 7.4880 | $ 1872.00 |
500 + | $ 7.3710 | $ 3685.50 |
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UnitedSiC UF3C120080B7S technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology:SiCFET (Cascode SiCJFET)
Supplier Device Package:D2PAK-7
Power Dissipation ( Max):190W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):1200 V
Current - Continuous Drain ( Id) @ 25° C:28.8A (Tc)
Rds On ( Max) @ Id, Vgs:105mOhm @ 20A, 12V
Vgs(th) ( Max) @ Id:6V @ 10mA
Gate Charge ( Qg) ( Max) @ Vgs:23 nC @ 12 V
Input Capacitance ( Ciss) ( Max) @ Vds:754 pF @ 100 V
Drive Voltage ( Max Rds On, Min Rds On):-
Vgs ( Max):±25V
EU RoHS Status:ROHS3 Compliant
MSL Rating:3 (168 Hours,30°C/60%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
UF3C120080B7S provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support.
On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications.
Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
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