Toshiba Semiconductor and Storage RN4902,LF(CT technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Product Status:Active
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Power - Max:200mW
Supplier Device Package:US6
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector ( Ic) ( Max):100mA
Voltage - Collector Emitter Breakdown ( Max):50V
Vce Saturation ( Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff ( Max):500nA
D C Current Gain (h F E) ( Min) @ Ic, Vce:50 @ 10mA, 5V
Frequency - Transition:200MHz
Resistor - Base ( R1):10kOhms
Resistor - Emitter Base ( R2):10kOhms
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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