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ROHM Semiconductor US6X8TR
30V 400mW 270@100mA,2V 1A 2PCSNPN(Dual) TUMT-6 Bipolar Transistors - BJT
Manufacturer # :US6X8TR
Manufacturer :ROHM Semiconductor
Dasenic # :A50AEE-DS
Datasheet :
US6X8TR Datasheet
US6X8TR DatasheetSample :
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Description : 30V 400mW 270@100mA,2V 1A 2PCSNPN(Dual) TUMT-6 Bipolar Transistors - BJT TUMT-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 5+ | $ 0.135900 | $ 0.68 |
| 50+ | $ 0.116100 | $ 5.81 |
| 100+ | $ 0.112500 | $ 11.25 |
| 500+ | $ 0.103500 | $ 51.75 |
| 1000+ | $ 0.100800 | $ 100.8 |
In Stock: 9000
MOQ :1 PCS
Packaging :TUMT-6
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.1359
Total :$ 0.14
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- Category:Discrete Semiconductor Devices/Pre-biased Bipolar Transistor Arrays
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Package / Case:6-SMD, Flat Leads
- Power - Max:400mW
- Supplier Device Package:TUMT6
- Transistor Type:2 NPN (Dual)
- Current - Collector ( Ic) ( Max):1A
- Voltage - Collector Emitter Breakdown ( Max):30V
- Vce Saturation ( Max) @ Ib, Ic:350mV @ 25mA, 500mA
- Current - Collector Cutoff ( Max):100nA (ICBO)
- D C Current Gain (h F E) ( Min) @ Ic, Vce:270 @ 100mA, 2V
- Frequency - Transition:320MHz
