Rochester Electronics NDH8321C technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSOP (0.130", 3.30mm Width)
Power - Max:800mW (Ta)
Supplier Device Package:SuperSOT™-8
F E T Type:N and P-Channel
F E T Feature:Standard
Drain to Source Voltage ( Vdss):20V
Current - Continuous Drain ( Id) @ 25° C:3.8A (Ta), 2.7A (Ta)
Rds On ( Max) @ Id, Vgs:35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V
Vgs(th) ( Max) @ Id:1V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:28nC @ 4.5V, 23nC @ 4.5V
Input Capacitance ( Ciss) ( Max) @ Vds:700pF @ 10V, 865pF @ 10V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:Vendor omitted MSL Rating information
US ECCN:EAR99
HTS US:8541.21.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
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- Please inform us within 365 days of receiving the product.
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- Please refer to our After-Sale Matters for more detailed instructions.
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NDH8321C Datasheet
