Rochester Electronics MBT35200MT1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Single
Product Status:Active
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Power - Max:625 mW
Supplier Device Package:6-TSOP
Transistor Type:PNP
Current - Collector ( Ic) ( Max):2 A
Voltage - Collector Emitter Breakdown ( Max):35 V
Vce Saturation ( Max) @ Ib, Ic:310mV @ 20mA, 2A
Current - Collector Cutoff ( Max):100nA
D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 1.5A, 1.5V
Frequency - Transition:100MHz
EU RoHS Status:RoHS non-compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0075
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
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MBT35200MT1 Datasheet
