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Rochester Electronics IRFW610BTMFP001
N-CHANNEL POWER MOSFET
Manufacturer # :IRFW610BTMFP001
Manufacturer :Rochester Electronics
Dasenic # :IRFW610BTMFP001-DS
Datasheet :
IRFW610BTMFP001 Datasheet
IRFW610BTMFP001 DatasheetCustomer # :
Description : N-CHANNEL POWER MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.6143 | $ 0.61 |
| 25+ | $ 0.6020 | $ 15.05 |
| 100+ | $ 0.5774 | $ 57.74 |
| 500+ | $ 0.5529 | $ 276.45 |
| 1000+ | $ 0.5222 | $ 522.2 |
In Stock: 4800
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6143
Total :$ 0.61
Delivery :
Payment :
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IRFW610BTMFP001 information
Rochester Electronics IRFW610BTMFP001 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D²PAK
- Power Dissipation ( Max):3.13W (Ta), 38W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:3.3A (Tc)
- Rds On ( Max) @ Id, Vgs:1.5Ohm @ 1.65A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:9.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:225 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:Vendor omitted MSL Rating information
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Affected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
IRFW610BTMFP001 provided by Rochester Electronics
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