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Rochester Electronics IRFD311
N-CHANNEL POWER MOSFET
Manufacturer # :IRFD311
Manufacturer :Rochester Electronics
Dasenic # :IRFD311-DS
Datasheet :
IRFD311 Datasheet
IRFD311 DatasheetCustomer # :
Description : N-CHANNEL POWER MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.8678 | $ 0.87 |
| 25+ | $ 0.8504 | $ 21.26 |
| 100+ | $ 0.8157 | $ 81.57 |
| 500+ | $ 0.7810 | $ 390.5 |
| 1000+ | $ 0.7376 | $ 737.6 |
In Stock: 3996
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.8678
Total :$ 0.87
Delivery :
Payment :
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IRFD311 information
Rochester Electronics IRFD311 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:4-DIP (0.300", 7.62mm)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-DIP, Hexdip
- Power Dissipation ( Max):1W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):350 V
- Current - Continuous Drain ( Id) @ 25° C:400mA (Tc)
- Rds On ( Max) @ Id, Vgs:3.6Ohm @ 200mA, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:7.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:135 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS non-compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:Vendor omitted MSL Rating information
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
IRFD311 provided by Rochester Electronics
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Rochester offers a full range of manufacturing services including Design, Wafer Processing, Assembly, Test, Reliability, and IP Archiving providing single solutions through to full turnkey manufacturing, enabling faster time-to-market.
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