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Rochester Electronics HUFA76609D3ST_NL
N-CHANNEL POWER MOSFET
Manufacturer # :HUFA76609D3ST_NL
Manufacturer :Rochester Electronics
Dasenic # :3A2DB1-DS
Datasheet :
HUFA76609D3ST_NL Datasheet
HUFA76609D3ST_NL DatasheetSample :
Customer # :
Description : N-CHANNEL POWER MOSFET TO-252-3, DPak (2 Leads + Tab), SC-63
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.174100 | $ 0.17 |
| 25+ | $ 0.170600 | $ 4.27 |
| 100+ | $ 0.163600 | $ 16.36 |
| 500+ | $ 0.156700 | $ 78.35 |
| 1000+ | $ 0.148000 | $ 148 |
In Stock: 6843
MOQ :1 PCS
Packaging :TO-252-3, DPak (2 Leads + Tab), SC-63
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.1741
Total :$ 0.17
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252, (D-Pak)
- Power Dissipation ( Max):49W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:10A (Tc)
- Rds On ( Max) @ Id, Vgs:160mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:16 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:425 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±16V
