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Rochester Electronics F475R07W2H3B51BPSA1
IGBT MODULE 650V 75A 250W
Manufacturer # :F475R07W2H3B51BPSA1
Manufacturer :Rochester Electronics
Dasenic # :F475R07W2H3B51BPSA1-DS
Datasheet :
F475R07W2H3B51BPSA1 Datasheet
F475R07W2H3B51BPSA1 DatasheetCustomer # :
Description : IGBT MODULE 650V 75A 250W
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| Quantity | Unit Price | Total |
In Stock: 47
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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F475R07W2H3B51BPSA1 information
Rochester Electronics F475R07W2H3B51BPSA1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - IGBTs - Modules
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Power - Max:250 W
- Supplier Device Package:Module
- Configuration:Three Phase Inverter
- Input:Standard
- Current - Collector ( Ic) ( Max):75 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- Current - Collector Cutoff ( Max):1 mA
- I G B T Type:-
- Vce(on) ( Max) @ Vge, Ic:1.55V @ 15V, 37.5A
- Input Capacitance ( Cies) @ Vce:4.7 nF @ 25 V
- N T C Thermistor:Yes
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
F475R07W2H3B51BPSA1 provided by Rochester Electronics
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