Rochester Electronics ECH8411-TL-E technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-ECH
Power Dissipation ( Max):1.4W (Ta)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):20 V
Current - Continuous Drain ( Id) @ 25° C:9A (Ta)
Rds On ( Max) @ Id, Vgs:16mOhm @ 4A, 4V
Vgs(th) ( Max) @ Id:-
Gate Charge ( Qg) ( Max) @ Vgs:21 nC @ 4 V
Input Capacitance ( Ciss) ( Max) @ Vds:1740 pF @ 10 V
Drive Voltage ( Max Rds On, Min Rds On):-
Vgs ( Max):-
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
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ECH8411-TL-E Datasheet
