Rochester Electronics BUK9E8R5-40E,127 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK
Power Dissipation ( Max):96W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):40 V
Current - Continuous Drain ( Id) @ 25° C:75A (Tc)
Rds On ( Max) @ Id, Vgs:6.6mOhm @ 20A, 10V
Vgs(th) ( Max) @ Id:2.1V @ 1mA
Gate Charge ( Qg) ( Max) @ Vgs:20.9 nC @ 5 V
Input Capacitance ( Ciss) ( Max) @ Vds:2600 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On):5V, 10V
Vgs ( Max):±10V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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BUK9E8R5-40E,127 Datasheet
