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Rochester Electronics BSO330N02KG
BSO330N02 - Power Field-Effect Transistor, 4.2A, 20V, 0.03ohm, 2-Element, N-Channel, MOSFET
Manufacturer # :BSO330N02KG
Manufacturer :Rochester Electronics
Dasenic # :213B54-DS
Datasheet :
BSO330N02KG Datasheet
BSO330N02KG DatasheetSample :
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Description : BSO330N02 - Power Field-Effect Transistor, 4.2A, 20V, 0.03ohm, 2-Element, N-Channel, MOSFET 8-SOIC (0.154", 3.90mm Width) Bulk
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.223100 | $ 0.22 |
| 25+ | $ 0.218700 | $ 5.47 |
| 100+ | $ 0.209700 | $ 20.97 |
| 500+ | $ 0.200800 | $ 100.4 |
| 1000+ | $ 0.189600 | $ 189.6 |
In Stock: 1746
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.2231
Total :$ 0.22
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Power - Max:1.4W
- Supplier Device Package:PG-DSO-8
- Configuration:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):20V
- Current - Continuous Drain ( Id) @ 25° C:5.4A
- Rds On ( Max) @ Id, Vgs:30mOhm @ 6.5A, 4.5V
- Vgs(th) ( Max) @ Id:1.2V @ 20µA
- Gate Charge ( Qg) ( Max) @ Vgs:4.9nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:730pF @ 10V
- Series:OptiMOS™
- Base Product Number:BSO330N02
- Packaging:Bulk
