Rochester Electronics BSO330N02KG technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Power - Max:1.4W
Supplier Device Package:PG-DSO-8
F E T Type:2 N-Channel (Dual)
F E T Feature:Logic Level Gate
Drain to Source Voltage ( Vdss):20V
Current - Continuous Drain ( Id) @ 25° C:5.4A
Rds On ( Max) @ Id, Vgs:30mOhm @ 6.5A, 4.5V
Vgs(th) ( Max) @ Id:1.2V @ 20µA
Gate Charge ( Qg) ( Max) @ Vgs:4.9nC @ 4.5V
Input Capacitance ( Ciss) ( Max) @ Vds:730pF @ 10V
EU RoHS Status:ROHS3 Compliant
MSL Rating:3 (168 Hours,30°C/60%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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BSO330N02KG Datasheet
