Rochester Electronics BFR181WE6327 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - RF
Product Status:Active
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Power - Max:175mW
Supplier Device Package:SOT-323
Transistor Type:NPN
Current - Collector ( Ic) ( Max):20mA
Voltage - Collector Emitter Breakdown ( Max):12V
D C Current Gain (h F E) ( Min) @ Ic, Vce:70 @ 5mA, 8V
Frequency - Transition:8GHz
Noise Figure (d B Typ @ f):0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain:19dB
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0075
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
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BFR181WE6327 Datasheet
