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Renesas Electronics ISL6613AECBZ
Half Bridge MOSFET 1.25A 10.8V~13.2V 2A SOIC-8-EP Gate Drive ICs![part number has RoHS](/img/RoHS2.png)
Manufacturer # :ISL6613AECBZ
Manufacturer :Renesas Electronics
Dasenic # :2C10B2-DS
Datasheet :
ISL6613AECBZ Datasheet
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Description : Half Bridge MOSFET 1.25A 10.8V~13.2V 2A SOIC-8-EP Gate Drive ICs SOIC-8-EP
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1+ | $ 2.772000 | $ 2.77 |
100+ | $ 2.079000 | $ 207.9 |
1000+ | $ 1.800000 | $ 1800 |
In Stock: 4662
MOQ :1 PCS
Packaging :SOIC-8-EP
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 2.772
Total :$ 2.77
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- Category:Integrated Circuits (ICs)/Gate Drivers for Power MOSFETs and IGBTs
- Product Status:Obsolete
- Operating Temperature:0°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Input Type:Non-Inverting
- Supplier Device Package:8-SOIC-EP
- Voltage - Supply:10.8V ~ 13.2V
- Channel Type:Synchronous
- Driven Configuration:Half-Bridge
- Number of Drivers:2
- Gate Type:N-Channel MOSFET
- Current - Peak Output ( Source, Sink):1.25A, 2A
- High Side Voltage - Max ( Bootstrap):36 V
- Rise / Fall Time ( Typ):26ns, 18ns
- Base Product Number:ISL6613
- Packaging:Tube