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1 : $19.1512
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Renesas Electronics HIP2100IR4ZT
HALF BRIDGE BASED MOSFET DRIVER
Manufacturer # :HIP2100IR4ZT
Manufacturer :Renesas Electronics
Dasenic # :DA13C9-DS
Datasheet :
HIP2100IR4ZT Datasheet
HIP2100IR4ZT DatasheetSample :
Customer # :
Description : HALF BRIDGE BASED MOSFET DRIVER 12-VFDFN Exposed Pad
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 19.151200 | $ 19.15 |
| 25+ | $ 18.781500 | $ 469.54 |
| 100+ | $ 17.968200 | $ 1796.82 |
| 500+ | $ 17.228700 | $ 8614.35 |
| 1000+ | $ 16.267500 | $ 16267.5 |
In Stock: 7200
MOQ :1 PCS
Packaging :12-VFDFN Exposed Pad
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 19.1512
Total :$ 19.15
Delivery : 
Payment :
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- Category:Integrated Circuits (ICs)/Gate Drivers for Power MOSFETs and IGBTs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:12-VFDFN Exposed Pad
- Input Type:Non-Inverting
- Supplier Device Package:12-DFN (4x4)
- Voltage - Supply:9V ~ 14V
- Channel Type:Independent
- Driven Configuration:Half-Bridge
- Number of Drivers:2
- Gate Type:N-Channel MOSFET
- Logic Voltage - V I L, V I H:4V, 7V
- Current - Peak Output ( Source, Sink):2A, 2A
- High Side Voltage - Max ( Bootstrap):114 V
- Rise / Fall Time ( Typ):10ns, 10ns
