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Onsemi NSVMUN5213DW1T3G
80@5mA,10V 2 NPN - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors
Manufacturer # :NSVMUN5213DW1T3G
Manufacturer :Onsemi
Dasenic # :C35095-DS
Datasheet :
NSVMUN5213DW1T3G Datasheet
NSVMUN5213DW1T3G DatasheetSample :
Customer # :
Description : 80@5mA,10V 2 NPN - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors SOT-323-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.297000 | $ 0.3 |
| 10+ | $ 0.208800 | $ 2.09 |
| 100+ | $ 0.132300 | $ 13.23 |
| 1000+ | $ 0.058500 | $ 58.5 |
| 2500+ | $ 0.051300 | $ 128.25 |
In Stock: 24000
MOQ :1 PCS
Packaging :SOT-323-6
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.297
Total :$ 0.30
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Pre-biased Bipolar Transistor Arrays
- Product Status:Active
- Package / Case:6-TSSOP, SC-88, SOT-363
- Power - Max:250mW
- Supplier Device Package:SC-88/SC70-6/SOT-363
- Transistor Type:2 NPN - Pre-Biased (Dual)
- Current - Collector ( Ic) ( Max):100mA
- Voltage - Collector Emitter Breakdown ( Max):50V
- Vce Saturation ( Max) @ Ib, Ic:250mV @ 300µA, 10mA
- Current - Collector Cutoff ( Max):500nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:80 @ 5mA, 10V
- Resistor - Base ( R1):47kOhms
- Resistor - Emitter Base ( R2):47kOhms
