Rochester Electronics NDS9952A technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Power - Max:900mW
Supplier Device Package:8-SOIC
F E T Type:N and P-Channel
F E T Feature:Logic Level Gate
Drain to Source Voltage ( Vdss):30V
Current - Continuous Drain ( Id) @ 25° C:3.7A, 2.9A
Rds On ( Max) @ Id, Vgs:80mOhm @ 1A, 10V
Vgs(th) ( Max) @ Id:2.8V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:25nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:320pF @ 10V
US ECCN:EAR99
HTS US:8542.39.0001
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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NDS9952A Datasheet
