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Onsemi FJN3310RBU
100@1mA,5V 1 NPN - Pre Biased 300mW 100mA 40V 100nA TO-92-3 Digital Transistors
Manufacturer # :FJN3310RBU
Manufacturer :Onsemi
Dasenic # :3EB755-DS
Datasheet :
FJN3310RBU Datasheet
FJN3310RBU DatasheetSample :
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Description : 100@1mA,5V 1 NPN - Pre Biased 300mW 100mA 40V 100nA TO-92-3 Digital Transistors TO-92-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.020500 | $ 0.02 |
| 200+ | $ 0.008000 | $ 1.6 |
| 500+ | $ 0.007700 | $ 3.85 |
| 1000+ | $ 0.007600 | $ 7.6 |
In Stock: 69
MOQ :1 PCS
Packaging :TO-92-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0205
Total :$ 0.02
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Obsolete
- Mounting Type:Through Hole
- Power - Max:300 mW
- Supplier Device Package:TO-92-3
- Transistor Type:NPN - Pre-Biased
- Current - Collector ( Ic) ( Max):100 mA
- Voltage - Collector Emitter Breakdown ( Max):40 V
- Vce Saturation ( Max) @ Ib, Ic:300mV @ 1mA, 10mA
- Current - Collector Cutoff ( Max):100nA (ICBO)
- D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 1mA, 5V
- Frequency - Transition:250 MHz
- Resistor - Base ( R1):10 kOhms
- Base Product Number:FJN331
