Rochester Electronics FDS6900AS technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Power - Max:900mW
Supplier Device Package:8-SOIC
F E T Type:2 N-Channel (Dual)
F E T Feature:Logic Level Gate
Drain to Source Voltage ( Vdss):30V
Current - Continuous Drain ( Id) @ 25° C:6.9A, 8.2A
Rds On ( Max) @ Id, Vgs:27mOhm @ 6.9A, 10V
Vgs(th) ( Max) @ Id:3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:15nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:600pF @ 15V
US ECCN:EAR99
HTS US:8542.39.0001
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
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Q: What is the return or replacement process for FDS6900AS?
A: Dasenic conducts Pre-Shipment Inspections (PSI) on all orders to ensure quality before shipment. Suppose there are issues such as quantity discrepancies, incorrect items, or visible defects (e.g., breakage or rust), and they are acknowledged by us. In that case, returns or replacements will be accepted under the following conditions:
- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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FDS6900AS Datasheet
