NXP Semiconductors BFG310W/XR,115 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - RF
Product Status:Obsolete
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-82A, SOT-343
Power - Max:60mW
Supplier Device Package:CMPAK-4
Transistor Type:NPN
Current - Collector ( Ic) ( Max):10mA
Voltage - Collector Emitter Breakdown ( Max):6V
D C Current Gain (h F E) ( Min) @ Ic, Vce:60 @ 5mA, 3V
Frequency - Transition:14GHz
Noise Figure (d B Typ @ f):1dB @ 2GHz
Gain:18dB
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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BFG310W/XR,115 Datasheet
