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Nexperia USA Inc. PUMB1/DG/B3,115
Manufacturer # :PUMB1/DG/B3,115
Manufacturer :Nexperia USA Inc.
Dasenic # :PUMB1/DG/B3,115-DS
Datasheet : PUMB1/DG/B3,115 Datasheet
Customer # :
Description : TRANS PREBIAS 2PNP 50V 6TSSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 20
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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PUMB1/DG/B3,115 information
Nexperia USA Inc. PUMB1/DG/B3,115 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Power - Max:300mW
- Supplier Device Package:6-TSSOP
- Transistor Type:2 PNP - Pre-Biased (Dual)
- Current - Collector ( Ic) ( Max):100mA
- Voltage - Collector Emitter Breakdown ( Max):50V
- Vce Saturation ( Max) @ Ib, Ic:150mV @ 500µA, 10mA
- Current - Collector Cutoff ( Max):100nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:60 @ 5mA, 5V
- Frequency - Transition:180MHz
- Resistor - Base ( R1):22kOhms
- Resistor - Emitter Base ( R2):22kOhms
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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