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Nexperia PQMD13Z
100@10mA,5V 350mW 100mA 50V 100nA 2 PNP - Pre-Biased SOT1216 Digital Transistors
Manufacturer # :PQMD13Z
Manufacturer :Nexperia
Dasenic # :0FEF26-DS
Datasheet :
PQMD13Z Datasheet
PQMD13Z DatasheetSample :
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Description : 100@10mA,5V 350mW 100mA 50V 100nA 2 PNP - Pre-Biased SOT1216 Digital Transistors SOT1216
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.035800 | $ 0.04 |
| 25+ | $ 0.035100 | $ 0.88 |
| 100+ | $ 0.033700 | $ 3.37 |
| 500+ | $ 0.032200 | $ 16.1 |
| 1000+ | $ 0.030400 | $ 30.4 |
In Stock: 9909
MOQ :1 PCS
Packaging :SOT1216
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0358
Total :$ 0.04
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- Category:Discrete Semiconductor Devices/Pre-biased Bipolar Transistor Arrays
- Product Status:Active
- Package / Case:6-XFDFN Exposed Pad
- Power - Max:350mW
- Supplier Device Package:DFN1010B-6
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector ( Ic) ( Max):100mA
- Voltage - Collector Emitter Breakdown ( Max):50V
- Vce Saturation ( Max) @ Ib, Ic:100mV @ 250µA, 5mA
- Current - Collector Cutoff ( Max):1µA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 10mA, 5V
- Frequency - Transition:230MHz, 180MHz
- Resistor - Base ( R1):4.7kOhms
- Resistor - Emitter Base ( R2):47kOhms
