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Macom® MRF166C

FET RF 65V 500MHZ 319-07
part number has RoHS
Manufacturer # :MRF166C
Manufacturer :Macom®
Dasenic # :262ECB-DS
Customer # :
Description : FET RF 65V 500MHZ 319-07 319-07 319-07
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 54.018000$ 54.02
10+$ 52.236000$ 522.36
20+$ 49.095000$ 981.9
60+$ 45.504000$ 2730.24
100+$ 45.486000$ 4548.6
In Stock: 1636
MOQ :1 PCS
Packaging :319-07 319-07
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 54.018
Total :$ 54.02
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MRF166C information

Product Details
of Macom® MRF166C The Macom® MRF166C is a high-performance LDMOS (laterally-diffused metal-oxide-semiconductor) RF power transistor designed for use in RF power amplifier applications. It is known for its high efficiency, robust thermal performance, and capability to operate at high frequencies, which makes it suitable for various communication systems. Functions - RF Power Amplification: The MRF166C is primarily used in RF power amplification applications, converting low-power RF inputs into high-power RF outputs. - High Linearity: Provides linear amplification, essential for maintaining signal integrity in communication systems. - Wide Frequency Range: Typically designed to amplify signals in the UHF frequency range, it can operate efficiently within specified bandwidths. - High Efficiency: The device is designed to deliver high power output with low distortion and minimal heat generation. Applications - Telecommunications: Used in base stations and repeaters for cellular communication. - Broadcasting: Suitable for AM/FM radio and television transmission. - Military: Employed in radar and electronic warfare systems. - Industrial: Used in industrial heating and plasma applications. - Consumer Electronics: Found in high-power audio amplifiers and other RF applications. Alternative Parts When looking for alternatives to the MRF166C, consider other RF LDMOS transistors that match its specifications in terms of power output, frequency range, and efficiency. Some alternatives might include: - NXP BLF188XR: A competing RF power transistor with similar applications. - Infineon BGS16N: Another option with similar performance characteristics. - Broadcom BCM2245: Offers RF amplification suitable for telecommunications. Embedded Modules Embedded modules featuring the MRF166C or similar technologies include: - RF Power Amplifier Modules: These may integrate the MRF166C within a larger assembly that includes additional components for control and modulation. - Communications System Modules: Systems that leverage MRF166C for cellular or microwave applications. Related Q&A 1. Q: What is the maximum output power of the Macom® MRF166C? A: The MRF166C typically provides a maximum output power of around 200 W, depending on the operating conditions and specific circuit design. 2. Q: What frequency range can the MRF166C operate in? A: The MRF166C operates effectively in the UHF frequency range, typically from 470 MHz to 600 MHz, making it suitable for various RF applications. 3. Q: Can the MRF166C be used in both analog and digital applications? A: Yes, the MRF166C can be used in both analog and digital applications, particularly in RF power amplification for communications, as it supports high linearity and efficiency. 4. Q: What are the thermal characteristics of the MRF166C? A: The MRF166C has robust thermal performance, handling high heatsinks due to its design, allowing for effective dissipation of heat during operation. 5. Q: Where can I find alternative RF power transistors similar to the MRF166C? A: Alternative RF power transistors can be found in semiconductor distributors or manufacturers' documentation, with options like the NXP BLF188XR or Infineon BGS16N being good substitutes.
  • Macom® MRF166C technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/RF FETs, MOSFETs
  • Product Status:Active
  • Voltage - Rated:65 V
  • Frequency:30MHz ~ 500MHz
  • Current Rating ( Amps):4A
  • Supplier Device Package:319-07, Style 3
  • Power - Output:20W
  • Transistor Type:N-Channel
  • Gain:16dB
  • Voltage - Test:28 V
  • Current - Test:25 mA
  • Packaging:319-07
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