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Kioxia America, Inc. TC58BVG0S3HTAI0

IC FLASH 1GBIT PARALLEL 48TSOP I
part number has RoHS
Manufacturer # :TC58BVG0S3HTAI0
Manufacturer :Kioxia America, Inc.
Dasenic # :E21778-DS
Customer # :
Description : IC FLASH 1GBIT PARALLEL 48TSOP I 48-TFSOP (0.724", 18.40mm Width)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 2.889000$ 2.89
10+$ 2.547000$ 25.47
96+$ 2.223000$ 213.41
576+$ 1.998000$ 1150.85
In Stock: 1690
MOQ :1 PCS
Packaging :48-TFSOP (0.724", 18.40mm Width)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.889
Total :$ 2.89
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TC58BVG0S3HTAI0 information

Product Details
The Kioxia TC58BVG0S3HTAI0 is a high-performance NAND flash memory chip designed for applications requiring high reliability and efficiency. It is part of Kioxia's lineup of flash memory solutions, often used in various consumer and industrial applications. Functions - Data Storage: Provides non-volatile storage solutions for data. - Read/Write Operations: Supports high-speed read and write operations, enhancing performance in data-intensive applications. - Memory Management: Incorporates advanced features for wear leveling and garbage collection to maintain optimal performance over time. Applications - Consumer Electronics: Used in smartphones, tablets, and cameras for storage. - Data Centers: Employed in SSDs for cloud storage and enterprise applications. - Automotive: Can be integrated into automotive systems for data processing and storage. - Industrial: Utilized in embedded systems for data storage requirements. Alternative Parts - Samsung K85: Another high-speed NAND flash memory solution. - Micron MT29F: Offers similar performance characteristics for embedded applications. - SK Hynix H27: Alternative option with comparable capabilities. Embedded Modules - eMMC (embedded MultiMediaCard): Modules that incorporate Kioxia NAND flash within eMMC specifications for mobile applications. - UFS (Universal Flash Storage): Higher performance modules that integrate Kioxia's NAND with a UFS interface, suitable for premium devices. Related Q&A Q1: What are the key specifications of the TC58BVG0S3HTAI0? A1: The TC58BVG0S3HTAI0 features advanced NAND flash technology with high data transfer rates and efficiency, optimized for consumer and industrial applications. Specific parameters such as capacity, endurance, and power consumption can be found in Kioxia's datasheet. Q2: In what scenarios is it beneficial to use NAND flash memory like the TC58BVG0S3HTAI0? A2: NAND flash memory is advantageous in scenarios where fast read/write speeds, non-volatility, and durability are essential, such as in smartphones, computing devices, and industrial equipment that require reliable data storage. Q3: How does the TC58BVG0S3HTAI0 compare to traditional hard drives? A3: The TC58BVG0S3HTAI0 provides faster data access times, lower power consumption, and greater shock resistance compared to traditional spinning hard drives, making it ideal for mobile and high-performance applications. Q4: Are there any reliability features built into the TC58BVG0S3HTAI0? A4: Yes, the TC58BVG0S3HTAI0 incorporates features such as wear leveling, error correction code (ECC), and bad block management to enhance the reliability and longevity of the memory. Q5: Can the TC58BVG0S3HTAI0 be used in automotive applications? A5: Yes, the TC58BVG0S3HTAI0 is suitable for automotive applications due to its durability and performance, making it ideal for data-intensive tasks such as navigation systems and infotainment modules.
  • Kioxia America, Inc. TC58BVG0S3HTAI0 technical specifications, attributes, parameters.
  • Category:Integrated Circuits (ICs)/Memory
  • Product Status:Active
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Package / Case:48-TFSOP (0.724", 18.40mm Width)
  • Technology:FLASH - NAND (SLC)
  • Supplier Device Package:48-TSOP I
  • Memory Size:1Gb (128M x 8)
  • Memory Type:Non-Volatile
  • Voltage - Supply:2.7V ~ 3.6V
  • Access Time:25 ns
  • Memory Format:FLASH
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:25ns
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