Name: IV1Q12160T4
Brand: Inventchip
SKU: DS-6144832
Price: 15.147 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Inventchip IV1Q12160T4

SIC MOSFET, 1200V 160MOHM, TO-24

Manufacturer # :IV1Q12160T4

Manufacturer :Inventchip

Dasenic # :IV1Q12160T4-DS

Datasheet :

IV1Q12160T4 Datasheet

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Description : SIC MOSFET, 1200V 160MOHM, TO-24

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Quantity	Unit Price	Total
1+	$ 15.1470	$ 15.15
30+	$ 9.9342	$ 298.03
120+	$ 15.1470	$ 1817.64

In Stock: 1596

MOQ :1 PCS

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Unit Price :$ 15.147

Total :$ 15.15

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IV1Q12160T4 information

Inventchip IV1Q12160T4 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-4
Technology:SiC (Silicon Carbide Junction Transistor)
Supplier Device Package:TO-247-4
Power Dissipation ( Max):138W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):1200 V
Current - Continuous Drain ( Id) @ 25° C:20A (Tc)
Rds On ( Max) @ Id, Vgs:195mOhm @ 10A, 20V
Vgs(th) ( Max) @ Id:2.9V @ 1.9mA
Gate Charge ( Qg) ( Max) @ Vgs:43 nC @ 20 V
Input Capacitance ( Ciss) ( Max) @ Vds:885 pF @ 800 V
Drive Voltage ( Max Rds On, Min Rds On):20V
Vgs ( Max):+20V, -5V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Inventchip IV1Q12160T4
Datasheet:
IV1Q12160T4,

Inventchip IV1Q12160T4 Environmental and export classification status description

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IV1Q12160T4 provided by Inventchip

InventChip Technology Co., Ltd. is a high-tech semiconductor company, focusing on Silicon Carbide power device and driver/control IC product development. It was founded in 2017 and is located in Shanghai, China. Inventchip provides power conversion solutions centered on SiC power devices, SiC driver chips, and SiC modules suitable for wind energy, photovoltaic, industrial power supplies, new energy vehicles, motor drives, charging piles, and other fields. Inventchip initiated the research and development of 6-inch SiC MOSFETs from its inception. After three years of intensive R&D, it became the first company in China to master 6-inch SiC MOSFET and SBD processes, along with SiC MOSFET driver chips. Inventchip is committed to develop high-quality and cost-effective SiC power devices and IC products, dedicated to end systems’ size miniaturization, weight-reduction and efficiency-improvement，and to provide complete and turnkey semiconductor solutions.