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Inventchip IV1D06006O2
SIC DIODE, 650V 6A, TO-220-2
Manufacturer # :IV1D06006O2
Manufacturer :Inventchip
Dasenic # :IV1D06006O2-DS
Datasheet :
IV1D06006O2 Datasheet
IV1D06006O2 DatasheetCustomer # :
Description : SIC DIODE, 650V 6A, TO-220-2
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.8610 | $ 3.86 |
| 50+ | $ 2.1550 | $ 107.75 |
| 100+ | $ 3.8610 | $ 386.1 |
| 500+ | $ 1.6875 | $ 843.75 |
In Stock: 1632
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.861
Total :$ 3.86
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IV1D06006O2 information
Inventchip IV1D06006O2 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-220-2
- Supplier Device Package:TO-220-2
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):17.4A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.65 V @ 6 A
- Current - Reverse Leakage @ Vr:10 µA @ 650 V
- Capacitance @ Vr, F:212pF @ 1V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):650 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
IV1D06006O2 provided by Inventchip
InventChip Technology Co., Ltd. is a high-tech semiconductor company, focusing on Silicon Carbide power device and driver/control IC product development. It was founded in 2017 and is located in Shanghai, China.
Inventchip provides power conversion solutions centered on SiC power devices, SiC driver chips, and SiC modules suitable for wind energy, photovoltaic, industrial power supplies, new energy vehicles, motor drives, charging piles, and other fields.
Inventchip initiated the research and development of 6-inch SiC MOSFETs from its inception. After three years of intensive R&D, it became the first company in China to master 6-inch SiC MOSFET and SBD processes, along with SiC MOSFET driver chips.
Inventchip is committed to develop high-quality and cost-effective SiC power devices and IC products, dedicated to end systems’ size miniaturization, weight-reduction and efficiency-improvement，and to provide complete and turnkey semiconductor solutions.
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