Images are for reference only.
1 : $9.1260
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Inventchip IV1D12010O2
SIC DIODE, 1200V 10A, TO-220-2
Manufacturer # :IV1D12010O2
Manufacturer :Inventchip
Dasenic # :IV1D12010O2-DS
Datasheet :
IV1D12010O2 Datasheet
IV1D12010O2 DatasheetCustomer # :
Description : SIC DIODE, 1200V 10A, TO-220-2
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 9.1260 | $ 9.13 |
| 50+ | $ 5.4488 | $ 272.44 |
| 100+ | $ 9.1260 | $ 912.6 |
| 500+ | $ 5.0625 | $ 2531.25 |
In Stock: 1690
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 9.126
Total :$ 9.13
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
IV1D12010O2 information
Inventchip IV1D12010O2 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-220-2
- Supplier Device Package:TO-220-2
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):28A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 10 A
- Current - Reverse Leakage @ Vr:50 µA @ 1200 V
- Capacitance @ Vr, F:575pF @ 1V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C (TJ)
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
IV1D12010O2 provided by Inventchip
InventChip Technology Co., Ltd. is a high-tech semiconductor company, focusing on Silicon Carbide power device and driver/control IC product development. It was founded in 2017 and is located in Shanghai, China.
Inventchip provides power conversion solutions centered on SiC power devices, SiC driver chips, and SiC modules suitable for wind energy, photovoltaic, industrial power supplies, new energy vehicles, motor drives, charging piles, and other fields.
Inventchip initiated the research and development of 6-inch SiC MOSFETs from its inception. After three years of intensive R&D, it became the first company in China to master 6-inch SiC MOSFET and SBD processes, along with SiC MOSFET driver chips.
Inventchip is committed to develop high-quality and cost-effective SiC power devices and IC products, dedicated to end systems’ size miniaturization, weight-reduction and efficiency-improvement，and to provide complete and turnkey semiconductor solutions.
Inventchip Related product recommendations
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
