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Inventchip IV1Q12050T3
SIC MOSFET, 1200V 50MOHM, TO-247
Manufacturer # :IV1Q12050T3
Manufacturer :Inventchip
Dasenic # :IV1Q12050T3-DS
Datasheet :
IV1Q12050T3 Datasheet
IV1Q12050T3 DatasheetCustomer # :
Description : SIC MOSFET, 1200V 50MOHM, TO-247
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| Quantity | Unit Price | Total |
| 1+ | $ 63.3000 | $ 63.3 |
| 30+ | $ 46.2500 | $ 1387.5 |
In Stock: 1033
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 63.3
Total :$ 63.30
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IV1Q12050T3 information
Inventchip IV1Q12050T3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiC (Silicon Carbide Junction Transistor)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):327W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:58A (Tc)
- Rds On ( Max) @ Id, Vgs:65mOhm @ 20A, 20V
- Vgs(th) ( Max) @ Id:3.2V @ 6mA
- Gate Charge ( Qg) ( Max) @ Vgs:120 nC @ 20 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2770 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):20V
- Vgs ( Max):+20V, -5V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
IV1Q12050T3 provided by Inventchip
InventChip Technology Co., Ltd. is a high-tech semiconductor company, focusing on Silicon Carbide power device and driver/control IC product development. It was founded in 2017 and is located in Shanghai, China.
Inventchip provides power conversion solutions centered on SiC power devices, SiC driver chips, and SiC modules suitable for wind energy, photovoltaic, industrial power supplies, new energy vehicles, motor drives, charging piles, and other fields.
Inventchip initiated the research and development of 6-inch SiC MOSFETs from its inception. After three years of intensive R&D, it became the first company in China to master 6-inch SiC MOSFET and SBD processes, along with SiC MOSFET driver chips.
Inventchip is committed to develop high-quality and cost-effective SiC power devices and IC products, dedicated to end systems’ size miniaturization, weight-reduction and efficiency-improvement，and to provide complete and turnkey semiconductor solutions.
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