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Infineon Technologies BFR93AE6327HTSA1
12V 300mW 70@30mA,8V 90mA NPN SOT-23(TO-236) Bipolar Transistors - BJT
Manufacturer # :BFR93AE6327HTSA1
Manufacturer :Infineon Technologies
Dasenic # :78B967-DS
Datasheet :
BFR93AE6327HTSA1 Datasheet
BFR93AE6327HTSA1 DatasheetSample :
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Description : 12V 300mW 70@30mA,8V 90mA NPN SOT-23(TO-236) Bipolar Transistors - BJT SOT-23(TO-236)
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| Quantity | Unit Price | Total |
| 10+ | $ 0.154100 | $ 1.54 |
| 3000+ | $ 0.085600 | $ 256.8 |
| 6000+ | $ 0.084700 | $ 508.2 |
| 9000+ | $ 0.083900 | $ 755.1 |
| 15000+ | $ 0.078300 | $ 1174.5 |
In Stock: 24892
MOQ :1 PCS
Packaging :SOT-23(TO-236)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.1541
Total :$ 0.15
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- Category:Discrete Semiconductor Devices/Bipolar RF Transistors
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Power - Max:300mW
- Supplier Device Package:PG-SOT23
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):90mA
- Voltage - Collector Emitter Breakdown ( Max):12V
- D C Current Gain (h F E) ( Min) @ Ic, Vce:70 @ 30mA, 8V
- Frequency - Transition:6GHz
- Noise Figure (d B Typ @ f):1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain:9.5dB ~ 14.5dB
