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Infineon Technologies BCR133SE6327BTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
Manufacturer # :BCR133SE6327BTSA1
Manufacturer :Infineon Technologies
Dasenic # :D6C5AD-DS
Datasheet :
BCR133SE6327BTSA1 Datasheet
BCR133SE6327BTSA1 DatasheetSample :
Customer # :
Description : TRANS 2NPN PREBIAS 0.25W SOT363 6-VSSOP, SC-88, SOT-363
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.197800 | $ 1.98 |
| 18000+ | $ 0.098900 | $ 1780.2 |
| 30000+ | $ 0.097200 | $ 2916 |
| 75000+ | $ 0.087300 | $ 6547.5 |
| 150000+ | $ 0.075600 | $ 11340 |
In Stock: 53
MOQ :1 PCS
Packaging :6-VSSOP, SC-88, SOT-363
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.1978
Total :$ 0.20
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Pre-biased Bipolar Transistor Arrays
- Product Status:Obsolete
- Package / Case:6-VSSOP, SC-88, SOT-363
- Power - Max:250mW
- Supplier Device Package:PG-SOT363-6
- Transistor Type:2 NPN - Pre-Biased (Dual)
- Current - Collector ( Ic) ( Max):100mA
- Voltage - Collector Emitter Breakdown ( Max):50V
- Vce Saturation ( Max) @ Ib, Ic:300mV @ 500µA, 10mA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:30 @ 5mA, 5V
- Frequency - Transition:130MHz
- Resistor - Base ( R1):10kOhms
- Resistor - Emitter Base ( R2):10kOhms
