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Infineon Technologies BCR08PNH6327XTSA1
70@5mA,5V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V SOT-363-6 Digital Transistors
Manufacturer # :BCR08PNH6327XTSA1
Manufacturer :Infineon Technologies
Dasenic # :9EFB2C-DS
Datasheet :
BCR08PNH6327XTSA1 Datasheet
BCR08PNH6327XTSA1 DatasheetSample :
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Description : 70@5mA,5V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V SOT-363-6 Digital Transistors SOT-363-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.071800 | $ 0.07 |
| 25+ | $ 0.070400 | $ 1.76 |
| 100+ | $ 0.067500 | $ 6.75 |
| 500+ | $ 0.064600 | $ 32.3 |
| 1000+ | $ 0.061000 | $ 61 |
In Stock: 9745
MOQ :1 PCS
Packaging :SOT-363-6
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0718
Total :$ 0.07
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- Category:Discrete Semiconductor Devices/Pre-biased Bipolar Transistor Arrays
- Product Status:Not For New Designs
- Package / Case:6-VSSOP, SC-88, SOT-363
- Power - Max:250mW
- Supplier Device Package:PG-SOT363-6
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector ( Ic) ( Max):100mA
- Voltage - Collector Emitter Breakdown ( Max):50V
- Vce Saturation ( Max) @ Ib, Ic:300mV @ 500µA, 10mA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:70 @ 5mA, 5V
- Frequency - Transition:170MHz
- Resistor - Base ( R1):2.2kOhms
- Resistor - Emitter Base ( R2):47kOhms
