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GaNPower GPI65030DFN
GANFET N-CH 650V 30A DFN8X8
Manufacturer # :GPI65030DFN
Manufacturer :GaNPower
Dasenic # :GPI65030DFN-DS
Datasheet :
GPI65030DFN Datasheet
GPI65030DFN DatasheetCustomer # :
Description : GANFET N-CH 650V 30A DFN8X8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 30.0000 | $ 30 |
In Stock: 821
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 30
Total :$ 30.00
Delivery :
Payment :
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GPI65030DFN information
GaNPower GPI65030DFN technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Technology:GaNFET (Gallium Nitride)
- Supplier Device Package:Die
- Power Dissipation ( Max):-
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:30A
- Rds On ( Max) @ Id, Vgs:-
- Vgs(th) ( Max) @ Id:1.2V @ 3.5mA
- Gate Charge ( Qg) ( Max) @ Vgs:5.8 nC @ 6 V
- Input Capacitance ( Ciss) ( Max) @ Vds:241 pF @ 400 V
- Drive Voltage ( Max Rds On, Min Rds On):6V
- Vgs ( Max):+7.5V, -12V
- EU RoHS Status:RoHS Compliant
- MSL Rating:Vendor omitted MSL Rating information
- REACH Status:REACH is not affected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GPI65030DFN provided by GaNPower
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