GaNPower GPI65010DF56
in_stock: 2586
MOQ: 1
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- Manufacturer_part :GPI65010DF56
- Manufacturer :GaNPower
- Dasenic_Part :GPI65010DF56-DS
- Datasheet : GPI65010DF56 Datasheet PDF
- Description : GANFET N-CH 650V 10A DFN 5X6
- package :-
- unit_price: $10.0000total: $10.00
Quantity | unit_price | You Save |
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1-1 | $10.0000 | - |
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GaNPower GPI65010DF56 technical_specifications
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:Die
Power Dissipation ( Max):-
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:10A
Rds On ( Max) @ Id, Vgs:-
Vgs(th) ( Max) @ Id:1.4V @ 3.5mA
Gate Charge ( Qg) ( Max) @ Vgs:2.6 nC @ 6 V
Input Capacitance ( Ciss) ( Max) @ Vds:90 pF @ 400 V
Drive Voltage ( Max Rds On, Min Rds On):6V
Vgs ( Max):+7.5V, -12V
EU RoHS Status:RoHS Compliant
MSL Rating:Vendor omitted MSL Rating information
REACH Status:REACH is not affected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
GPI65010DF56 provided by GaNPower
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Ratings and Reviews
Great Product
John D.
Excellent product quality and fast shipping service. Will definitely purchase again!
Good Experience
Sarah M.
Smooth transaction process and responsive customer support. Highly recommended!
Satisfied
Mike R.
Accurate product description and arrived earlier than expected.
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