Flip Electronics NSVBC848CDW1T1G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Power - Max:380mW
Supplier Device Package:SC-88/SC70-6/SOT-363
Transistor Type:2 NPN (Dual)
Current - Collector ( Ic) ( Max):100mA
Voltage - Collector Emitter Breakdown ( Max):30V
Vce Saturation ( Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff ( Max):15nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce:420 @ 2mA, 5V
Frequency - Transition:100MHz
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0075
China RoHS Status:Green Symbol: Green and environmentally friendly product
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Q: What is the warranty period for the NSVBC848CDW1T1G?
A: We offer a 1-year warranty on the NSVBC848CDW1T1G. This warranty covers any defects in materials and artistry under normal use. During the warranty period, if the product is found to be defective, it will be repaired or replaced at no charge. For further details, please refer to our warranty policy.
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Q: What is the return or replacement process for NSVBC848CDW1T1G?
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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NSVBC848CDW1T1G Datasheet
