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Diodes Incorporated ZXTDE4M832TA
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- Category:Discrete Semiconductor Devices/Pre-biased Bipolar Transistor Arrays
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-VDFN Exposed Pad
- Power - Max:1W
- Supplier Device Package:8-MLP (3x2)
- Transistor Type:NPN, PNP
- Current - Collector ( Ic) ( Max):3.5A, 2.5A
- Voltage - Collector Emitter Breakdown ( Max):80V, 70V
- Vce Saturation ( Max) @ Ib, Ic:325mV @ 300mA, 3.5A, 260mV @ 200mA, 1.5A
- Current - Collector Cutoff ( Max):25nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:300 @ 200mA, 2V / 40 @ 1.5A, 5V
- Frequency - Transition:160MHz, 180MHz
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