Central Semiconductor MPQ7053 TIN/LEAD technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Obsolete
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:14-DIP (0.300", 7.62mm)
Power - Max:750mW
Supplier Device Package:TO-116
Transistor Type:2 NPN, 2 PNP
Current - Collector ( Ic) ( Max):500mA
Voltage - Collector Emitter Breakdown ( Max):250V
Vce Saturation ( Max) @ Ib, Ic:700mV @ 2mA, 20mA
Current - Collector Cutoff ( Max):250nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce:25 @ 30mA, 10V
Frequency - Transition:50MHz
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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MPQ7053 TIN/LEAD Datasheet
