Central Semiconductor MPQ3906 PBFREE technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Obsolete
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:14-DIP (0.300", 7.62mm)
Power - Max:500mW
Supplier Device Package:TO-116
Transistor Type:4 PNP (Quad)
Current - Collector ( Ic) ( Max):200mA
Voltage - Collector Emitter Breakdown ( Max):40V
Vce Saturation ( Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff ( Max):50nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce:75 @ 10mA, 1V
Frequency - Transition:200MHz
EU RoHS Status:Request inventory verification
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0075
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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MPQ3906 PBFREE Datasheet
