Wolfspeed E3M0120090J

Name: E3M0120090J
Brand: Wolfspeed
SKU: E3M0120090J-DS
Price: 7.0704 USD
Availability: InStock
Rating: 4.8 (42 reviews)

in_stock: 5850

MOQ: 1

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Manufacturer_part :E3M0120090J
Manufacturer :Wolfspeed
Dasenic_Part :E3M0120090J-DS
Datasheet : E3M0120090J Datasheet PDF
Description : 900V 120M AUTOMOTIVE SIC MOSFET
package :-
unit_price: $7.0704
total: $7.07

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Wolfspeed E3M0120090J technical_specifications

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single

Product Status:Active

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Technology:SiCFET (Silicon Carbide)

Supplier Device Package:TO-263-7

Power Dissipation ( Max):83W (Tc)

F E T Type:N-Channel

F E T Feature:-

Drain to Source Voltage ( Vdss):900 V

Current - Continuous Drain ( Id) @ 25° C:22A (Tc)

Rds On ( Max) @ Id, Vgs:155mOhm @ 15A, 15V

Vgs(th) ( Max) @ Id:3.5V @ 3mA

Gate Charge ( Qg) ( Max) @ Vgs:18 nC @ 15 V

Input Capacitance ( Ciss) ( Max) @ Vds:414 pF @ 600 V

Drive Voltage ( Max Rds On, Min Rds On):15V

Vgs ( Max):+15V, -4V

MSL Rating:Vendor omitted MSL Rating information

US ECCN:EAR99

HTS US:8541.29.0095

EU RoHS Status:RoHS Compliant

REACH Status:REACH is not affected

China RoHS Status:Green Symbol: Green and environmentally friendly product

E3M0120090J provided by Wolfspeed

Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.