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Wolfspeed CPW2-1200-S010B
DIODE SCHOTTKY 1200V 10A
Manufacturer # :CPW2-1200-S010B
Manufacturer :Wolfspeed
Dasenic # :CPW2-1200-S010B-DS
Datasheet :
CPW2-1200-S010B Datasheet
CPW2-1200-S010B DatasheetCustomer # :
Description : DIODE SCHOTTKY 1200V 10A
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
In Stock: 75
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
Delivery :
Payment :
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CPW2-1200-S010B information
Wolfspeed CPW2-1200-S010B technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):31A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 10 A
- Current - Reverse Leakage @ Vr:-
- Capacitance @ Vr, F:1000F @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):-
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
CPW2-1200-S010B provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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