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  • Wolfspeed CAB530M12BM3

    1200V, 530A H-BRIDGE SIC MODULE
  • part number has RoHS
  • Mfr.Part # :CAB530M12BM3
  • Manufacturer :Wolfspeed
  • Dasenic # :CAB530M12BM3-DS
  • Datasheet :pdf download CAB530M12BM3 Datasheet
  • Description : 1200V, 530A H-BRIDGE SIC MODULE
  • Package :-
  • Quantity :
    Unit Price : $ 1814.74Total : $ 1814.74
  • Delivery Time :Ship Within 48 Hours
  • Shipping Origin :Shenzhen or Hong Kong Warehouse
  • Delivery :
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  • Payment :
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In Stock: 1514
( MOQ : 1 PCS )
Pricing (USD) : * All prices are in USD
QuantityUnit PriceTotal
1 +$ 1814.7400$ 1814.74

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Wolfspeed CAB530M12BM3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Power - Max:-
Supplier Device Package:Module
F E T Type:2 N-Channel
F E T Feature:Silicon Carbide (SiC)
Drain to Source Voltage ( Vdss):1200V (1.2kV)
Current - Continuous Drain ( Id) @ 25° C:530A
Rds On ( Max) @ Id, Vgs:3.55mOhm @ 530A, 15V
Vgs(th) ( Max) @ Id:3.6V @ 140mA
Gate Charge ( Qg) ( Max) @ Vgs:1362nC @ 4V
Input Capacitance ( Ciss) ( Max) @ Vds:39.6nF @ 800V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
CAB530M12BM3 provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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