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Wolfspeed CAB006A12GM3
Manufacturer # :CAB006A12GM3
Manufacturer :Wolfspeed
Dasenic # :CAB006A12GM3-DS
Datasheet : CAB006A12GM3 Datasheet
Customer # :
Description : 1200V 2B HALF-BRIDGE,ALN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 1660
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 201.627
Total :$ 201.63
Delivery :
Payment :
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CAB006A12GM3 information
Wolfspeed CAB006A12GM3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Power - Max:10mW (Tc)
- Supplier Device Package:-
- F E T Type:2 N-Channel (Half Bridge)
- F E T Feature:Silicon Carbide (SiC)
- Drain to Source Voltage ( Vdss):1200V (1.2kV)
- Current - Continuous Drain ( Id) @ 25° C:200A (Tj)
- Rds On ( Max) @ Id, Vgs:6.9mOhm @ 200A, 15V
- Vgs(th) ( Max) @ Id:3.6V @ 69mA
- Gate Charge ( Qg) ( Max) @ Vgs:708nC @ 15V
- Input Capacitance ( Ciss) ( Max) @ Vds:20.4nF @ 800V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
CAB006A12GM3 provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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