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Wolfspeed C4D20120H
ZRECTM 20A 1200V SIC SCHOTTKY DI
Manufacturer # :C4D20120H
Manufacturer :Wolfspeed
Dasenic # :C4D20120H-DS
Datasheet :
C4D20120H Datasheet
C4D20120H DatasheetCustomer # :
Description : ZRECTM 20A 1200V SIC SCHOTTKY DI
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 30+ | $ 6.8994 | $ 206.98 |
In Stock: 3261
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 6.8994
Total :$ 6.90
Delivery :
Payment :
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C4D20120H information
Wolfspeed C4D20120H technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-247-2
- Supplier Device Package:TO-247-2
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):54A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 20 A
- Current - Reverse Leakage @ Vr:200 µA @ 1200 V
- Capacitance @ Vr, F:1.5nF @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
C4D20120H provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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