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Wolfspeed C3M0075120J
Manufacturer # :C3M0075120J
Manufacturer :Wolfspeed
Dasenic # :C3M0075120J-DS
Datasheet : C3M0075120J Datasheet
Customer # :
Description : SICFET N-CH 1200V 30A D2PAK-7
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In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 9.3299
Total :$ 9.33
Delivery :
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C3M0075120J information
Wolfspeed C3M0075120J technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:D2PAK-7
- Power Dissipation ( Max):113.6W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:90mOhm @ 20A, 15V
- Vgs(th) ( Max) @ Id:4V @ 5mA
- Gate Charge ( Qg) ( Max) @ Vgs:51 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1350 pF @ 1000 V
- Drive Voltage ( Max Rds On, Min Rds On):15V
- Vgs ( Max):+19V, -8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
C3M0075120J provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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