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Wolfspeed C3M0065100J

Name: C3M0065100J
Brand: Wolfspeed
SKU: C3M0065100J-DS
Price: 12.6810 USD
Availability: InStock
Rating: 4.8 (42 reviews)

In Stock: 5334

MOQ: 1

2 Price Tiers

Mfr.Part # :C3M0065100J
Manufacturer :Wolfspeed
Dasenic # :C3M0065100J-DS
Datasheet : C3M0065100J Datasheet PDF
Description : SICFET N-CH 1000V 35A D2PAK-7
Package :-
Unit Price: $12.6810
Total: $12.68

Quantity	Unit Price	You Save
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2-100	$12.1320	4.3% save

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Wolfspeed C3M0065100J technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single

Product Status:Active

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Technology:SiCFET (Silicon Carbide)

Supplier Device Package:D2PAK-7

Power Dissipation ( Max):113.5W (Tc)

F E T Type:N-Channel

F E T Feature:-

Drain to Source Voltage ( Vdss):1000 V

Current - Continuous Drain ( Id) @ 25° C:35A (Tc)

Rds On ( Max) @ Id, Vgs:78mOhm @ 20A, 15V

Vgs(th) ( Max) @ Id:3.5V @ 5mA

Gate Charge ( Qg) ( Max) @ Vgs:35 nC @ 15 V

Input Capacitance ( Ciss) ( Max) @ Vds:660 pF @ 600 V

Drive Voltage ( Max Rds On, Min Rds On):15V

Vgs ( Max):+15V, -4V

EU RoHS Status:RoHS Compliant

REACH Status:REACH is not affected

US ECCN:EAR99

China RoHS Status:Green Symbol: Green and environmentally friendly product

C3M0065100J provided by Wolfspeed

Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.