Wolfspeed C3M0025065J1

Name: C3M0025065J1
Brand: Wolfspeed
SKU: C3M0025065J1-DS
Price: 9.7092 USD
Availability: InStock
Rating: 4.8 (42 reviews)

in_stock: 3468

MOQ: 1

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Manufacturer_part :C3M0025065J1
Manufacturer :Wolfspeed
Dasenic_Part :C3M0025065J1-DS
Datasheet : C3M0025065J1 Datasheet PDF
Description : 650V 25 M SIC MOSFET
package :-
unit_price: $9.7092
total: $9.71

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Wolfspeed C3M0025065J1 technical_specifications

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single

Product Status:Active

Operating Temperature:-40°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Technology:SiC (Silicon Carbide Junction Transistor)

Supplier Device Package:TO-263-7

Power Dissipation ( Max):271W (Tc)

F E T Type:N-Channel

F E T Feature:-

Drain to Source Voltage ( Vdss):650 V

Current - Continuous Drain ( Id) @ 25° C:80A (Tc)

Rds On ( Max) @ Id, Vgs:34mOhm @ 33.5A, 15V

Vgs(th) ( Max) @ Id:3.6V @ 9.22mA

Gate Charge ( Qg) ( Max) @ Vgs:109 nC @ 15 V

Input Capacitance ( Ciss) ( Max) @ Vds:2980 pF @ 400 V

Drive Voltage ( Max Rds On, Min Rds On):15V

Vgs ( Max):+19V, -8V

MSL Rating:3 (168 Hours,30°C/60%RH)

US ECCN:EAR99

HTS US:8541.29.0095

EU RoHS Status:RoHS Compliant

REACH Status:REACH is not affected

China RoHS Status:Green Symbol: Green and environmentally friendly product

C3M0025065J1 provided by Wolfspeed

Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.