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Wolfspeed C3M0016120D
Manufacturer # :C3M0016120D
Manufacturer :Wolfspeed
Dasenic # :C3M0016120D-DS
Datasheet : C3M0016120D Datasheet
Customer # :
Description : SICFET N-CH 1200V 115A TO247-3
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In Stock: 3171
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 47.25
Total :$ 47.25
Delivery :
Payment :
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C3M0016120D information
Wolfspeed C3M0016120D technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):556W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:115A (Tc)
- Rds On ( Max) @ Id, Vgs:22.3mOhm @ 75A, 15V
- Vgs(th) ( Max) @ Id:3.6V @ 23mA
- Gate Charge ( Qg) ( Max) @ Vgs:207 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6085 pF @ 1000 V
- Drive Voltage ( Max Rds On, Min Rds On):15V
- Vgs ( Max):+15V, -4V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
C3M0016120D provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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