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Wolfspeed, Inc. C3D1P7060Q

Diode 600 V 9.7A Surface Mount 10-Power QFN (3.3x3.3)
part number has RoHS
Manufacturer # :C3D1P7060Q
Manufacturer :Wolfspeed, Inc.
Dasenic # :122057-DS
Customer # :
Description : Diode 600 V 9.7A Surface Mount 10-Power QFN (3.3x3.3) Tape & Reel
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
2+$ 39.000600$ 78
3+$ 32.000400$ 96
5+$ 31.000500$ 155
6+$ 30.000600$ 180
8+$ 29.000700$ 232.01
In Stock: 7500
MOQ :1 PCS
Packaging :Tape & Reel
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 39.0006
Total :$ 39.00
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C3D1P7060Q information

Product Details
The C3D1P7060Q is a high-performance silicon carbide (SiC) MOSFET designed for high-voltage applications. Wolfspeed, Inc. specializes in wide bandgap semiconductor technology, and this device is typically used in power electronics applications requiring efficient switching performance and thermal management. Functions - Switching Performance: The C3D1P7060Q is designed for fast switching to minimize energy losses during operation, making it suitable for applications like power converters and motor drives. - Thermal Management: The device can handle high temperatures, which is crucial for maintaining performance in demanding environments. - High Voltage Operation: This MOSFET can operate at higher voltages compared to conventional silicon devices, allowing for more compact designs that can deliver higher power levels. Applications - Power Conversion: Used in solar inverters, UPS systems, and AC-DC converters. - Electric Vehicles: Integral in the power management systems of electric and hybrid vehicles. - Industrial Applications: Utilized in various industrial motor drive applications, such as robotics and automation systems. Alternative Parts - Other Wolfspeed Products: C3D1P7060Q can be compared to other SiC MOSFETs from Wolfspeed, such as the C3D06120K or C3D05120E, which may have similar specifications but different ratings or package types. - Competitor Parts: Other manufacturers like ON Semiconductor, Infineon, and Texas Instruments offer alternative SiC MOSFETs with similar characteristics and applications. Embedded Modules - Power Modules: The C3D1P7060Q can be integrated into power modules that include multiple switches and diodes for compact system designs. - Driver Circuits: Often paired with specialized gate driver circuits to optimize performance and facilitate the control of the MOSFET in high-frequency applications. Related Q&A Q1: What is the maximum voltage rating of the C3D1P7060Q? A1: The C3D1P7060Q has a maximum voltage rating of 650V, making it suitable for various high-voltage applications. Q2: How does the C3D1P7060Q compare with silicon MOSFETs? A2: The C3D1P7060Q offers superior thermal management, higher voltage capability, and reduced switching losses compared to conventional silicon MOSFETs, making it more efficient for high-performance applications. Q3: In which applications is the C3D1P7060Q most commonly used? A3: It is commonly used in power conversion systems such as solar inverters, electric vehicle power management, and industrial motor drives. Q4: What are the thermal performance characteristics of the C3D1P7060Q? A4: The C3D1P7060Q is designed to operate at high temperatures, resulting in improved thermal conductivity and efficiency under demanding conditions. Q5: Can the C3D1P7060Q be directly replaced with other power MOSFETs? A5: While it can be replaced by other power MOSFETs, it is important to consider specifications such as voltage rating, current capacity, switching speed, and thermal performance to ensure compatibility in the target application.
  • Wolfspeed, Inc. C3D1P7060Q technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Schottky Diodes
  • Product Status:Obsolete
  • Mounting Type:Surface Mount
  • Package / Case:10-PowerTQFN
  • Technology:SiC (Silicon Carbide) Schottky
  • Supplier Device Package:10-Power QFN (3.3x3.3)
  • Speed:No Recovery Time > 500mA (Io)
  • Current - Average Rectified ( Io):9.7A
  • Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 1.7 A
  • Current - Reverse Leakage @ Vr:50 µA @ 600 V
  • Capacitance @ Vr, F:100pF @ 0V, 1MHz
  • Voltage - D C Reverse ( Vr) ( Max):600 V
  • Reverse Recovery Time (trr):0 ns
  • Operating Temperature - Junction:-55°C ~ 160°C
  • Series:Z-Rec®
  • Base Product Number:C3D1P7060
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