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Wolfspeed C2M0160120D
Manufacturer # :C2M0160120D
Manufacturer :Wolfspeed
Dasenic # :C2M0160120D-DS
Datasheet : C2M0160120D Datasheet
Customer # :
Description : SICFET N-CH 1200V 19A TO247-3 TO-247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 7251
MOQ :1 PCS
Packaging :TO-247-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 7.497
Total :$ 7.50
Delivery :
Payment :
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C2M0160120D information
Wolfspeed C2M0160120D technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Not For New Designs
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:19A (Tc)
- Rds On ( Max) @ Id, Vgs:196mOhm @ 10A, 20V
- Vgs(th) ( Max) @ Id:2.5V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:32.6 nC @ 20 V
- Input Capacitance ( Ciss) ( Max) @ Vds:527 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):20V
- Vgs ( Max):+25V, -10V
C2M0160120D provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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